PART |
Description |
Maker |
IS61SPS25632D IS61SPS25632T IS61SPS25636T IS61LPS5 |
256Kx32 Synchronous Pipelined Static RAM
|
ISSI
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EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families x32 Fast Synchronous SRAM 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
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WEDC[White Electronic Designs Corporation]
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IS61LF25632 IS61LF25636 IS61LF51218 |
(IS61LF25632 / IS61LF25636 / IS61LF51218) 256Kx32 Synchronous Flow-through Static RAM
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ISSI
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IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
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Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
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Integrated Silicon Solution, Inc. Integrated Silicon Solu...
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IDT709149S 709149_DS_24983 IDT709149S8PF IDT709149 |
4K x 9 Sync, Dual-Port RAM, Pipelined HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM From old datasheet system
|
IDT[Integrated Device Technology]
|
IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消
|
Integrated Device Technology, Inc.
|
GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量,通过同步唑的SRAM 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
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GSI Technology, Inc.
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WS256K32N-30HMA WS256K32-20G4C WS256K32-20G4CA WS2 |
256Kx32 SRAM Module(256Kx32静态RAM模块(存取时0ns 256Kx32 SRAM Module(256Kx32静态RAM模块(存取时5ns
|
White Electronic Designs Corporation ETC[ETC] List of Unclassifed Manufacturers
|
71256T36-67 71256T36-75 GVT71256T18 71256T36-10 7C |
256K x 18 Synchronous-Pipelined Cache Tag RAM 256 × 18的同步高速缓存标记内存流水线 256K x 18 Synchronous-Pipelined Cache Tag RAM 256K X 18 CACHE TAG SRAM, 3.5 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS8322Z72GC-225V GS8322Z36GB-166V GS8322Z36E-133V |
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 6.5 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 6.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 6.5 ns, PBGA165
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GSI Technology, Inc.
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